Journal
IEEE PHOTONICS JOURNAL
Volume 6, Issue 6, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2014.2363428
Keywords
Light-emitting diodes; optical devices
Funding
- National Natural Sciences Foundation of China [61274040, 61474109]
- National Basic Research Program of China [2011CB301902]
- National High Technology Program of China [2014AA032605]
- Youth Innovation Promotion Association, Chinese Academy of Sciences
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In this work, efficiency droop of InGaN/GaN multiple-quantum-well LEDs with super wide well (WW) is discussed by comparing the external quantum efficiency (EQE) of GaN grown on sapphire and FS-GaN substrates. The luminescence and electrical characteristics of these WW LEDs are also experimentally and theoretically analyzed. With the increase of well width from 3 nm to 6 nm, high V-pits density and more strain relaxation are found in WW LED on sapphire, which exhibits greatly reduced peak efficiency but almost negligible droop behavior. In contrast, despite a larger polarization field, WW LED on FS-GaN shows obviously enhanced peak efficiency and comparable droop compared to the counterpart with 3-nm well. The Auger recombination probably dominates the mechanism of efficiency droop rather than defect-related nonradiative recombination or polarization effect in the WW LED on both sapphire and FS-GaN, especially at high current density.
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