Monolithic Integration of Surface Plasmon Detector and Metal-Oxide-Semiconductor Field-Effect Transistors

The monolithic integration of a silicon-based plasmonic detector with metal-oxide-semiconductor field-effect transistors (MOSFETs) was demonstrated. The plasmonic detector consisted of a gold film with a nanoslit grating on a silicon substrate and was operated at a free-space wavelength of 1550 nm. The structure of the nanoslit grating was optimized by using the finite-difference time-domain method. The output current from the plasmonic detector was amplified by similar to 14 000 times using the monolithically integrated MOSFETs. In addition, dynamic operation of the integrated circuit was demonstrated by modulation of the intensity of a beam that was incident to the plasmonic detector.