Journal
IEEE PHOTONICS JOURNAL
Volume 4, Issue 6, Pages 2159-2168Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2012.2224101
Keywords
Silicon-PMOSFET LED; CMOS technology; light intensity modulation; optoelectronic integrated circuits (OEICs)
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A Si-p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-like LED has been developed for light emission modulation. In contrast to a two-terminal Si-diode LED modulated by current signal, a major advantage of this three-terminal Si-PMOSFET LED is that the optical intensity modulation can be controlled by gate voltage signal, a standard CMOSFET operation to ease both logic circuit implementation and light modulation. The gate applied voltage induces carrier concentration modulation at both channel and source/drain region under the gate, thus modulating electric-field distribution and its light emission. Fabricated in a standard CMOS process technology, this Si-PMOSFET LED ensures its potential on realizing silicon optoelectronic integration.
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