Journal
RECENT PATENTS ON NANOTECHNOLOGY
Volume 5, Issue 1, Pages 62-70Publisher
BENTHAM SCIENCE PUBL LTD
DOI: 10.2174/187221011794474921
Keywords
Patterned silicon nanowire arrays; chemical vapor deposition; molecular beam epitaxy; thermal evaporation; self-selective electroless plating; Si solar cells; thermal conductivity; field-effect transistor
Funding
- National Natural Science Foundation of China [50801013, 51071045]
- Natural Science Foundation of Jiangsu Province, China [BK2009291]
- Specialized Research Fund for the Doctoral Program of Higher Education [200802861065]
- Southeast University, Hong Kong Research Grants Council (RGC) General Research Fund (GRF) [CityU 112307]
- City University of Hong Kong [7008009]
Ask authors/readers for more resources
Currently there is great interest in patterned silicon nanowire arrays and applications. The accurately controlled fabrication of patterned silicon nanowire arrays with the desirable axial crystallographic orientation using simpler and quicker ways is very desirable and of great importance to material synthesis and future nanoscale optoelectronic devices that employ silicon. The recent advances in manipulating patterned silicon nanowire arrays and patents are reviewed with a focus on the progress of nanowire fabrication and applications.
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