Journal
SCIENCE OF ADVANCED MATERIALS
Volume 6, Issue 11, Pages 2465-2469Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/sam.2014.2207
Keywords
ZnO Hemispheres Array; Hydrothermal Method; Laser Interference Lithography; LEDs
Funding
- Pioneer Research Center Program through the National Research Foundation of Korea - Ministry of Science, ICT and Future Planning (NRF) [2013M3C1A3063046]
- GIST Specialized Research Project
- ETRI
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To improve the light extraction efficiency (LEE) for GaN-based blue light emitting diodes (LEDs), we proposed a zinc oxide (ZnO) hemispheres array on top of an indium tin oxide (ITO) electrode. The ZnO hemispheres array was produced with two-step hydrothermal growth technique. First, a periodic ZnO seed dots array was fabricated by laser interference lithography (LIL) followed by ZnO sputtering. Then, it was dipped into a nutrient solution for the growth of flower-like ZnO structure consisting of omni-directional nanorods at each ZnO seed dot. In the secondary growth step, a growth inhibitor, which was electrostatically adsorbed on the top facet of ZnO nanorods, suppressed the c-axial growth. Only lateral growth was activated to form a ZnO hemisphere by merging the neighboring ZnO nanorods. The ZnO hemispheres array was incorporated into the ITO contact surface of the GaN-based blue LEDs, and the LEE was enhanced by 20% at 20 mA compared to that of the LED without it.
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