Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 3, Issue 35, Pages 18083-18089Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ta04732c
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Funding
- INPEX
- Grants-in-Aid for Scientific Research [23000009] Funding Source: KAKEN
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The phosphidation of a ZnO/GaN solid solution photocatalyst enhanced significantly its activity for water splitting. The photocatalysts were heated with phosphorus in a vacuum-sealed quartz tube. Activation due to phosphidation was restricted within the narrow temperature range of 823-873 K, and varying amounts of P were added to the solid solution. In addition to X-ray diffraction peaks due to ZnO/GaN, active phosphide ZnO/GaN provided a single GaP peak with diffraction angles higher than normal GaP by 2 theta = 0.20-0.44 degrees, indicative of the formation of a GaP1-xNx alloy system. The diffraction peaks were simulated using first principles Ab inito calculations on molecular models of Ga32P32 N-y(y). The comparison with experimental shifts showed that the highest activity was induced in an x range of 0.034-0.074 of GaP1-xNx.
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