Journal
SCIENCE OF ADVANCED MATERIALS
Volume 5, Issue 10, Pages 1410-1417Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/sam.2013.1603
Keywords
High-k Gate Dielectrics; Interface Chemistry; MOCVD; Fermi Level Spinning; InGaAs
Funding
- Anhui Provincial Natural Science Foundation [1208085MF99]
- National Natural Science Foundation of China [51072001, 51272001]
- National Key Project of Fundamental Research [2013CB632705]
- National Science Research Foundation for Scholars Return from Overseas of Chinese Ministry of Education
- Provincial Natural Science Foundation of Anhui Higher Education Institution of China [KJ2012A023]
- Key Project of Chinese Ministry of Education [212082]
- Outstanding Young Scientific Foundation of Anhui University [KJJQ1103]
- 211 project of Anhui University
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In this report, the reduction and removal of surface native oxides.(GaOx, AsOx) from the as-received In GaAs surface by using dimethylaluminumhydride (DMAH)-derived AlON passivation layer with self-cleaning effect prior to HfTiO deposition is reported to solve Fermi level pinning challenge. XPS analysis has revealed that complete consumption of native oxides of AsOx and GaOx at the InGaAs surface, but no effect to InOx, has been realized by MOCVD AlON at 300 degrees C. Meanwhile, the regrowth of the native oxides at the interface of HfTiO/InGaAs gate stacks has been detected by inserting AlON passivation layer. Valence band spectra of HfTiO/AlON/InGaAs gate stacks show reduction in valence band offset and increase in conduction band offset compared to that of HfTiO/InGaAs. The improved interface control and suitable band offset relative to InGaAs make HfTiO/AlON/InGaAs as promising gate stacks in future InGaAs-based MOSFET devices.
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