Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 3, Issue 17, Pages 9128-9132Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ta01343g
Keywords
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Funding
- Office of Naval Research [N00014-14-1-0170]
- Department of Energy [DE-EE0006710]
- Asian Office of Aerospace RD [FA2386-11-1-4072]
- Boeing-Johnson Foundation
- Ministry of Science and Technology [103-2917-I-006-087-]
- National Science Foundation [DGE-0718124, DGE-1256082]
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A high-performance hole-transporting layer (HTL)-free conventional perovskite/fullerene heterojunction thin-film PVSC was demonstrated. We revealed that perovskite can modify the work function of ITO, leading to sufficient charge extraction efficiency at the ITO/perovskite interface. Combined with the high conductivity of ITO, a PCE of >11% with a high open-circuit voltage (V-OC) of 1.01 V was achieved.
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