4.5 Article

Influence of Barrier and Doping Type on the Open-Circuit Voltage of Liquid Phase-Crystallized Silicon Thin-Film Solar Cells on Glass

Journal

IEEE JOURNAL OF PHOTOVOLTAICS
Volume 5, Issue 4, Pages 1001-1005

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2015.2412453

Keywords

FrontERA; heterojunction; high absorber doping; laser beam-induced current (LBIC); multicrystalline; polycrystalline

Funding

  1. Globe-Si Project of the Federal Ministry for Economic Affairs and Energy [0325446A]

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We investigate the influence of the barrier type and the absorber doping on the open-circuit voltage of liquid phase-crystallized silicon solar cells on glass. It was found that the use of n-type instead of p-type substrates is the major reason for the recently reported boost of the open-circuit voltage (V-OC) up to values of 656 mV, which is by far exceeding the previously reported V-OC values of crystalline silicon solar cells on glass. Despite the high doping, locally, an internal quantum efficiency of 90% can be achieved. Therewith, efficiencies of 16% and up should be possible.

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