Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 5, Issue 5, Pages 1462-1469Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2015.2438644
Keywords
Atomic layer deposition (ALD); Cu(In, Ga)Se-2 (CIGS); photovoltaics; solar cells; spatial; thin films; transparent conductive oxides; zinc oxide
Funding
- National Research Foundation, Prime Minister's Office, Singapore [NRF2011EWT-CERP001-018]
- National University of Singapore
- Singapore's National Research Foundation through Singapore Economic Development Board
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Spatial atomic layer deposition (ALD) of intrinsic zinc oxide (i-ZnO) films is scaled up from the laboratory to the industrial level, and the film properties are investigated in detail. A high growth rate of 35 nm/min is achieved. The deposited films are transparent and have an unusually high resistivity of about 100 Omega . cm. This is attributed to the extremely short precursor exposure and purge duration of spatial ALD (similar to 8 ms), as compared with temporal ALD (similar to 1-10 s). The growth of highly crystalline and nearly stoichiometric i-ZnO films is achieved. This makes these i-ZnO layers ideal for applications as insulating window layers in Cu(In,Ga)Se-2 solar cells.
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