Process parameter analysis and parasitic reaction of ZnO grown through MOCVD

The technological parameters of metalorganic chemical vapor deposition (MOCVD) greatly influence the quality and properties of films. According to the chemical reaction mechanism of a ZnO film grown by using DEZn and H2O and the stable flow state in the reaction cavity, the effects of the process parameters of ZnO-MOCVD, including cavity pressure, substrate speed, and growth temperature, on the film's properties and parasitic reaction depend on the reaction mechanism and stable flow state in the reaction cavity. In this paper, the reasons for the change of film properties caused by the process parameters are also discussed. This study shows that increasing the pressure of the cavity is beneficial to the improvement of the film quality and does not affect the parasitic reaction. The improvement of the rotating speed is beneficial to the improvement of the film quality. However, the parasitic reaction increases slightly with the increase in speed or growth temperature. In addition, the increase in the growth temperature is beneficial to the increase of the film thickness, but is detrimental to the film uniformity. This study provides theoretical guidance for analyzing the regularity of ZnO films grown through DEZn and H2O in MOCVD.