Journal
VACUUM
Volume 101, Issue -, Pages 208-211Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2013.08.019
Keywords
Cu2SnS3; Spin coating; Thin film; Semiconductor; Solar energy material
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In this paper, Cu2SnS3 film with about 600 nm thickness was successfully prepared, for the first time, by one step sol-gel spin coating route on glass substrate. The sample was characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectroscopy. The X-ray diffraction result showed that the obtained layer was composed by Cu2SnS3 phase and has a tetragonal (I-42m) structure with (112) preferential orientation. The grain size calculated with Scherrer's formula was about 5 nm. The AFM and SEM studies reveal that the synthesized film is rough and compact without any visible cracks or pores. The film has high absorbance in the visible range (alpha > 510(4) cm(-1) at 2.88 eV) and direct band gap energy of 1.34 eV. This makes the material as a good candidate for low cost and friendly environment thin film solar cells. (C) 2013 Elsevier Ltd. All rights reserved.
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