Journal
VACUUM
Volume 86, Issue 1, Pages 23-26Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2011.03.026
Keywords
Thin film devices; Composite thin films; Acoustic microwave devices
Funding
- Foundation for Strategic research (SSF) through the MS2E Center
- Swedish Research Council (VR)
- WISENET (Vinnova)
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Piezoelectric c-textured Al(1-x)ScxN thin films, where the Sc relative concentration, x, varies in the range 0-0.15 have been studied in view of radio frequency (RF) electro-acoustic applications. Thin film bulk acoustic wave resonators (FBARs) employing these films were fabricated and characterized as a function of the Sc concentration for the first time. The measured electromechanical coupling is found to increase by as much as 100% in the above concentration range. The results from this work underline the potential of the c-textured Al(1-x)ScxN based FBARs for wide band RF applications. (C) 2011 Elsevier Ltd. All rights reserved.
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