Journal
VACUUM
Volume 85, Issue 9, Pages 861-865Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2011.01.002
Keywords
Cadmium oxide film; Sn doping; Pulse laser deposition; Transparent conductor oxide
Funding
- National Nature Science Foundation [50871046]
- Foundation of National Key Basic Research and Development Program [2010CB631001]
- Program for Changjiang Scholars and Innovative Research Team in University
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Transparent tin-doped cadmium oxide (Sn-CdO) thin films with different Sn concentration were deposited on quartz glass substrates by pulse laser deposition (PLD) at 400 degrees C. The film's crystallographic structure, optical and electrical properties were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), UV-VIS spectrophotometer and Hall system. Results show that doping of Sn enhances the film's [111] preferred orientation and causes slight shift in the (200) Bragg angle towards higher value. The optical band gaps (E-g) of the Sn-doped films were found to increase with the increase of Sn doping concentration. In addition, proper doping of Sn evidently improves the electrical properties of CdO, such as the resistivity of the CdO film with 2.9 at% Sn doping is about one-twelfth of that of the CdO film, while the carrier concentration is about 13 times of that of the undoped. The improvements both in optical and electrical properties endow that the Sn-CdO thin films have potential application as TCO material for different optoelectronic device applications. (C) 2011 Elsevier Ltd. All rights reserved.
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