Journal
ULTRASONICS
Volume 54, Issue 8, Pages 2165-2168Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.ultras.2014.06.006
Keywords
Standing wave channel; Convective flow; Crystal growth; Semiconducting III-V materials; Semiconducting silicon
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The flow simulation for GaxIn1-xSb and Si melts was conducted for quasi-steady conditions. The maximum velocity was under the solid-liquid interface near periphery of the crystals. An introduction of ultrasound into the liquid formed a standing wave channel under the solid-liquid interface, which acted on melt particles. The calculations of convective and ultrasonic forces acting on the particles in the melt showed that the ultrasonic force is much higher than the convective force. (C) 2014 Elsevier B.V. All rights reserved.
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