Journal
ULTRAMICROSCOPY
Volume 111, Issue 6, Pages 546-551Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.ultramic.2010.12.028
Keywords
Background subtraction; High-k; Hafnium zirconium oxide; Laser-pulsed atom probe tomography
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Funding
- technology funding for regional development (ERDF) of the European Union
- Free State of Saxony
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In this paper we present depth profiles of a high-k layer consisting of HfO2 with an embedded sub-nm thick ZrO2 layer obtained with atom probe tomography (APT). In order to determine suitable measurement parameters for reliable, reproducible, and quantitative analysis, we have investigated the influence of the laser energy and the specimen temperature on the resulting elemental composition. In addition we devise a procedure for local background subtraction both for the composition and the depth scale that is crucial for gaining reproducible results. We find that the composition of the high-k material remains unaffected even for extreme laser energies and base temperatures, while higher laser energies lead to an accumulation of silicon at the upper interface of the high-k layer. Furthermore we show that APT is capable of providing sub-nm depth resolution for high-k materials with high reproducibility, good compositional accuracy, and high measurement yield. (C) 2010 Elsevier B.V. All rights reserved.
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