Journal
ULTRAMICROSCOPY
Volume 110, Issue 2, Pages 105-117Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.ultramic.2009.09.013
Keywords
Electron energy loss spectroscopy (EELS); Scanning transmission electron microscopy (STEM); Spectrum imaging; High-k dielectrics
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Funding
- EPSRC [GR/S44280/01, EP/D040205/1]
- Engineering and Physical Sciences Research Council [GR/S44280/01, EP/D040205/1] Funding Source: researchfish
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Determining the bonding environment at a rough interface, using for example the near-edge fine structure in electron energy loss spectroscopy (EELS), is problematic since the measurement contains information from the interface and surrounding matrix phase. Here we present a novel analytical method for determining the interfacial EELS difference spectrum (with respect to the matrix phase) from a rough interface of unknown geometry, which, unlike multiple linear least squares (MLLS) fitting, does not require the use of reference spectra from suitable standards. The method is based on analysing a series of EELS spectra with variable interface to matrix volume fraction and, as an example, is applied to a TiN/poly-Si interface containing oxygen in a HfO(2)-based, high-k dielectric gate stack. A silicon oxynitride layer was detected at the interface consistent with previous results based on MLLS fitting. (C) 2009 Elsevier B.V. All rights reserved.
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