Journal
ADVANCED OPTICAL MATERIALS
Volume 3, Issue 9, Pages 1257-1263Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201400513
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Funding
- European Commission [CNECT-ICT-604391, FP7-ICT-2013-613024-GRASP]
- National Science Foundation [NSF DMR-0845464]
- Office of Naval Research [ONR N000141210456]
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The great potential of Dirac electrons for plasmonics and photonics has been readily recognized after their discovery in graphene, followed by applications to smart optical devices. Dirac carriers are also found in topological insulators (TIs)-quantum systems having an insulating gap in the bulk and intrinsic Dirac metallic states at the surface. Here, the plasmonic response of ring structures patterned in Bi2Se3 TI films is investigated through terahertz (THz) spectroscopy. The rings are observed to exhibit a bonding and an antibonding plasmon modes, which we tune in frequency by varying their diameter. An analytical theory based on the THz conductance of unpatterned films is developed, which accurately describes the strong plasmon-phonon hybridization and Fano interference experimentally observed as the bonding plasmon is swiped across the prominent 2 THz phonon exhibited by this material. This work opens the road for the investigation of plasmons in topological insulators and for their application in tunable THz devices.
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