Journal
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
Volume 19, Issue 4, Pages 997-1000Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S1003-6326(08)60394-5
Keywords
indium-zinc-oxide(IZO); inclination opposite target type DC magnetron sputtering; transparent conductive oxide(TCO); electromagnetic wave shielding effectiveness(SE)
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Funding
- Ministry of Education, Science Technology (MFST)
- Korea Industrial Technology Foundation (KOTEF)
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IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment, in which a sintered oxide IZO target (doped with 10% ZnO, packing density of 99.99%) was used. The effects of total sputtering pressure and film thickness on IZO films properties were studied. All the films produced at room temperature have a amorphous structure, irrespective of the total sputtering pressure and film thickness. A resistivity of the order of 10(-4) Omega.cm was obtained for IZO films deposited at lower pressure (film thickness of 190 nm). The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.
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