Journal
THIN SOLID FILMS
Volume 551, Issue -, Pages 19-22Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.11.043
Keywords
Conducting oxide; Nb-doped TiO2; Atomic layer deposition; Transport properties
Categories
Funding
- TEKES [1726/31/07]
- Academy of Finland [130352, 255562]
- Academy of Finland (AKA) [130352, 130352] Funding Source: Academy of Finland (AKA)
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Highly conducting Ti1-xNbxO2 thin films have been grown on glass substrates from TiCl4, Nb(OEt)(5) and H2O with an atomic layer deposition (ALD) technique. The films become electrically conducting and crystallize with the anatase structure upon a reductive post-deposition annealing. A highly c-axis oriented Ti0.75Nb0.25O2 film exhibits room-temperature resistivity as low as 1.4 x 10(-3) Omega cm. The charge carrier density and electron mobility, as estimated from Seebeck and resistivity measurements, are 0.21-1.1 x 10(21) cm(-3) and 4.2-22 cm(2)/Vs, respectively. The electrical properties of the ALD-fabricated Nb-doped anatase films are comparable with those of sputter-deposited polycrystalline films on glass. (C) 2013 Elsevier B.V. All rights reserved.
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