Journal
THIN SOLID FILMS
Volume 567, Issue -, Pages 101-104Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2014.07.052
Keywords
Dilute nitrides; Surface photovoltage; Photoreflectance; Contactless electroreflectance
Categories
Funding
- NCN [2012/07/E/ST3/01742]
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. DOE [DE-AC02-05CH11231]
- MNiSzW
- Fulbright Foreign Student Fellowship
- NSF DMR [1006835]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1410282] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1006835] Funding Source: National Science Foundation
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Surface photovoltage (SPV) spectra were measured for GaN0.014As0.986 layers at room temperature and compared with room temperature photoreflectance (PR) and contactless electroreflectance (CER) measurements. Spectral features related to E- and E+ transitions were clearly observed in SPV spectra at energies corresponding to PR and CER resonances. In this way it has been shown that SPV spectroscopy is an alternative absorption-like technique to study both the E- and E+ transitions in dilute nitrides. The observation of E+ transition in SPV spectra means that it is a direct optical transition at the G point of GaNAs band structure which can be explained by the band anticrossing interaction between the localized states of N and the extended conduction band states of the GaAs host. (C) 2014 Published by Elsevier B.V.
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