Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires

In this work, indium(In) doped ZnO nanowires are grown on a Si substrate by chemical vapor deposition (CVD), at a relatively low temperature of 550 degrees C. The effects of In concentration on the morphology, microstructure, luminescence and electrical properties of ZnO nanowires are investigated. The diameters and lengths of these nanowires are in the ranges of 70-311 nm and 10-15 mu m, respectively. These nanowires are single crystals growing in the [0001] direction. The maximum solubility of In in ZnO is estimated to be 3.47 at.%. Photoluminescence (PL) spectra reveal a red shift in the ultraviolet emission and intensity enhancement in the green emission with increasing indium doping concentration. Besides, carrier concentration, mobility and resistivity of the nanowires with different doping concentrations are determined based on single-nanowire field effect transistors (FET). (C) 2013 Elsevier B.V. All rights reserved.