Journal
THIN SOLID FILMS
Volume 545, Issue -, Pages 106-110Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.07.045
Keywords
Atomic layer deposition; Al-doped ZnO; Transparent electrode; Doping; Growth temperature
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Funding
- Energy International Collaboration Research & Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Knowledge Economy (MKE) [2011-8520010050]
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2012-003849]
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2012-0001447]
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Al-doped ZnO thin films (AZO) were deposited by atomic layer deposition at various temperatures (100-300 degrees C) with a frequency ratio of 19/1 (Zn-O/Al-O), and their properties were evaluated. With increasing growth temperature, the Al contents in the AZO thin films were continuously increased, because of the rapid increase in the incorporation efficiency of the Al-O layer with respect to the Zn-O layer. Although low-temperature deposition resulted in the abnormal [100]-preferred orientation of the AZO films, they had a high carrier density of similar to 10(20) cm(3). However, the Hall mobility showed a low value of 1.5 cm(2)/Vs due to the high density of impurities such as C-O or O-H caused by incomplete reaction for precursors. In contrast, the electrical and structural properties of the AZO thin films were enhanced by increasing growth temperature, due to the increased Al doping level and reduced residual impurities, which was confirmed by X-ray diffraction and X-ray photoelectron spectroscopy. (C) 2013 Published by Elsevier B. V.
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