Journal
THIN SOLID FILMS
Volume 543, Issue -, Pages 74-77Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.02.118
Keywords
Transmission electron microscopy; Low dimensional structures; Liquid phase epitaxy; Metalorganic vapor phase epitaxy; Antimonides; Semiconducting indium compounds
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The heterostructures with self-assembled InSb quantum dots (QDs) with density (up to 10(10) cm(-2)) were obtained on the InAs-rich (100)-oriented surface by combining technology including liquid phase epitaxy and metalorganic vapor phase epitaxy. Using of the multicomponent In-As-Sb-P solid solutions lattice-matched with InAs substrate as matrix layers allows changing the surface chemistry of a matrix material. High-resolution cross-section images of the coherent InSb QDs buried into the InAs(Sb, P) matrix were obtained by transmission electron microscopy. It was experimentally demonstrated that self-assembled InSb QDs can be formed on InAs-rich surface in Stranski-Krastanow mode. The optimal thickness of the wetting layer was dependent on matrix surface chemistry: 2 nm-thick for the binary InAs surface and 1.3 nm-thick for the quaternary InAsSbP one were found. (C) 2013 Elsevier B.V. All rights reserved.
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