Journal
THIN SOLID FILMS
Volume 537, Issue -, Pages 279-284Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.04.028
Keywords
Thin films; Resistive switching; Doping; First-principles
Categories
Funding
- Chinese National Natural Science Foundation [61072015]
- Scientific Research Foundation of the Education Department of Zhejiang Province [Y201223083]
- Programs of Science and Technology of Zhejiang Province [2011C37001]
- State Key Lab of Silicon Materials of Zhejiang University [SKL2011-3]
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Pt/ZnO:Ti/n(+)-Si structures that showed reversible and steady resistive switching behaviors were fabricated by magnetron sputtering. The stability of the devices was improved by Ti doping and the switching mechanism of the resistive switching was theoretically studied under the guidance of the first principles. The influences of different Ti atomic doping concentrations on the crystal structure and resistive switching characteristics were also investigated. The results revealed that the oxygen vacancy appears easily around the Ti ions since the formation energies of oxygen vacancies had the minimum value when it located at the next nearest neighboring to Ti atoms. (C) 2013 Elsevier B.V. All rights reserved.
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