Journal
THIN SOLID FILMS
Volume 531, Issue -, Pages 243-250Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.01.091
Keywords
Atomic layer deposition; Noble metal; Noble metal oxide; Palladium oxide; Thin films
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Funding
- ASM Microchemistry Oy
- Finnish Funding Agency for Technology and Innovation (Tekes)
- Picosun Oy
- Oxford Instruments Analytical Oy
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Atomic layer deposition (ALD) of noble metals by thermal processes has relied mostly on the use of molecular oxygen as a reactant at temperatures of 200 degrees C and above. In this study, the concept of using consecutive ozone and molecular hydrogen pulses with noble metal precursors in ALD is introduced for palladium, rhodium, and platinum metals. This approach facilitates the growth of noble metal thin films below 200 degrees C. Also the ALD of palladium oxide thin films is demonstrated by the ozone-based chemistry. The growth rates, resistivities, crystallinities, surface roughnesses, impurity contents, and adhesion of the films to the underlying Al2O3 starting surface are reported and the results are compared with the most common noble metal ALD processes. (C) 2013 Elsevier B.V. All rights reserved.
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