Journal
THIN SOLID FILMS
Volume 548, Issue -, Pages 186-189Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.09.071
Keywords
DC sputtering; ICP-assisted DC sputtering; Ge thin film; Crystalline film growth
Categories
Funding
- center project of KIST [2E23822]
- National Fusion Research Institute under Plasma Application Programs in Korea [2N36820]
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Growth of low-temperature metal-free crystallized Ge film was investigated using inductively coupled plasma-assisted DC magnetron sputtering. The films were deposited both without and with inductively coupled plasma. The films deposited by a conventional DC magnetron sputtering system had randomly oriented crystalline structures. However, the addition of inductively coupled plasma developed crystal phase from an amorphous to a preferred oriented crystalline with increasing sputtering power. The optical band gaps of the amorphous and crystalline phases were 0.96 eV and 0.7 eV, respectively. (C) 2013 Elsevier B. V. All rights reserved.
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