Journal
THIN SOLID FILMS
Volume 520, Issue 24, Pages 7147-7152Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.07.124
Keywords
Aluminum-doped zinc oxide; Silver; Multilayers; Thin films; Radio-frequency sputtering; Electron-beam evaporation; Transparent conductive oxides
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Funding
- National Science Council of Taiwan [NSC-100-2628-E-168-001-MY2]
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Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71x10(-4) Omega-cm, which can be decreased to 3.8x10(-5) Omega-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8x10(-3) Omega(-1). It was shown that the multilayer thin films have potential for applications in optoelectronics. (C) 2012 Elsevier B.V. All rights reserved.
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