Journal
THIN SOLID FILMS
Volume 520, Issue 14, Pages 4722-4725Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.10.194
Keywords
Transparent conductive oxides; Amorphous oxide semiconductors; Thin films; X-ray reflectivity; Spectroscopic ellipsometry; Optical properties
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The paper presents the optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films with various In/(In + Zn) ratios obtained by Pulsed Laser Deposition. Thickness results obtained from simulations of X-ray Reflectivity and Spectroscopic Ellipsometry data were very similar. The dependence of density on stoichiometry resembles the corresponding dependence of the refractive index in the transparency range. A free carrier absorption was noted in the visible spectral range, leading to a weak absorbing thin transparent conductive oxide. On the other hand, the refractive index is smaller than those of based oxides (ZnO and In2O3), and counterbalance therefore the weak light absorption. (C) 2011 Elsevier B.V. All rights reserved.
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