Journal
THIN SOLID FILMS
Volume 520, Issue 19, Pages 6118-6123Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.06.001
Keywords
Bismuth oxide; Nanowires; Sputtering; Photocatalysis
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Funding
- National Science Foundation [MRI-095956]
- Division Of Chemistry
- Direct For Mathematical & Physical Scien [0748676] Funding Source: National Science Foundation
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Nanowires of bismuth oxide were grown on Si substrates by unbalanced magnetron sputtering. Deposition time for the seed layer and oxygen partial pressure were varied to optimize the morphology of the resulting array of wires. A two step process involving variable oxygen flow rates was found to create the highest density of Bi2O3 nanowires in the array. Top-view and cross-sectional SEM micrographs suggested that the resulting Bi2O3 nanowires were approximately 300 nm in length with diameters of 100 nm at the base and 30 nm at the top. Investigation into the growth method suggests a self-catalytic process similar to vapor-liquid-solid growth. Band gap was determined by two different methods, using transmission spectroscopy and cyclic voltammetry which gave values of 2.53 eV and 2.61 eV respectively. Degradation experiments using rhodamine 6G display a direct relationship between nanowire density and photocatalytic results. (C) 2012 Elsevier B. V. All rights reserved.
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