Journal
THIN SOLID FILMS
Volume 520, Issue 24, Pages 7195-7199Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.07.087
Keywords
Polysilsesquioxane; 3-Methacryloxypropyl group; Ultra-thin film; Gate insulator; Organic field-effect transistor
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Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan
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Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol-gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 degrees C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol-gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. (C) 2012 Elsevier B.V. All rights reserved.
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