Journal
THIN SOLID FILMS
Volume 520, Issue 21, Pages 6459-6462Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.07.012
Keywords
Topological insulators; Pulsed laser deposition; Epitaxial thin films; Bismuth telluride; Weak anti-localization effect
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Funding
- Laboratory Directed Research and Development Program at Los Alamos National Laboratory (LANL), U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC52-06NA25396]
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We have grown high quality epitaxial topological insulator Bi2Te3 thin films on silicon (111) substrates by pulsed laser deposition. Systematic structural characterization of the films using X-ray diffraction and transmission electron microscopy has demonstrated that a low laser pulse rate is the key to achieving epitaxial films. The films show n-type metallic behavior, consistent with Te deficiency as determined by Rutherford backscattering spectrometry measurements. The A(1g) longitudinal optical phonon mode of Bi2Te3 was detected by time-resolved reflectivity measurements. A 2-dimensional (2-D) weak-antilocalization effect was also observed at low temperatures, which indicates the existence of topologically protected 2-D surface states in our thin films. This growth and characterization effort paves the way to fabricate multi-layer heterostructures of topological insulators along with ferromagnetic oxides and high temperature superconductors by the same growth technique in the search for physics arising from their interfacial couplings. (C) 2012 Elsevier B.V. All rights reserved.
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