Journal
THIN SOLID FILMS
Volume 520, Issue 19, Pages 6313-6317Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.06.040
Keywords
Ferroelectric films; Lithium niobate; Gallium nitride; Normally-off; Transistors
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Funding
- Education Ministry of China [625010112]
- National Science Foundation of China [50932002, 51002023, 51102284]
- Shandong Natural Science Foundation [ZR2010Q017]
- Fundamental Research Funds for the Central Universities [27R1210011A]
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With the help of MgO mask layer, LiNbO3 (LN) ferroelectric films were etched effectively using wet etching method and LN/AlGaN/GaN ferroelectric field-effect transistors (FFETs) were fabricated. The electrical properties of the FFETs were studied. Due to the ferroelectric polarization nature of LN films, normally-off characteristics with a turn-on voltage of about + 1.0 V were exhibited in the device. The operation mechanisms of the LN/AlGaN/GaN FFET devices were proposed by the numerical calculations of the electronic band structure and charge distribution. (C) 2012 Elsevier B. V. All rights reserved.
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