Journal
THIN SOLID FILMS
Volume 520, Issue 24, Pages 7087-7092Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.08.004
Keywords
Seed crystals; IR laser; Solid phase epitaxy; Solar cells; Silicon; Time resolved reflectivity measurements; Temperature simulations; Electron beam evaporation
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Funding
- German state of Thuringia [2008 FE 9160]
- Federal Government
- European Community (EFRE)
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High temperature solid phase epitaxial crystallization of amorphous silicon layers prepared by electron beam evaporation is investigated. By using a continuous wave diode laser for heating the films rapidly (in milliseconds to seconds) this method is suitable on glass substrates with low temperature resistance. Therefore, the method is an economically advantageous technique of producing absorber layers for thin film solar cells. For the experiments 500 nm of amorphous silicon was deposited on two different configurations of substrates. In the first one monocrystalline wafers of three different crystallographic orientations were used. In the second one a polycrystalline seed layer prepared on borosilicate glass served as substrate. The crystallization process was monitored in situ by time resolved reflectivity measurements. Depending on the crystal orientation 2 s to 3 s was needed for complete solid phase epitaxial crystallization of the amorphous films. The evolution of temperature during crystallization was simulated numerically. (C) 2012 Elsevier B.V. All rights reserved.
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