4.4 Article

Nanostructured thin films for anti-reflection applications

Journal

THIN SOLID FILMS
Volume 519, Issue 15, Pages 5194-5198

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.01.110

Keywords

Nanoimprint; Anti-reflection; Sub-wavelength structure

Funding

  1. National Science Council of Republic of China [NSC 96-2112-M-009-024-MY3, NSC 96-2120-M-009-004]
  2. MOE

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Anti-reflection (AR) thin films composed of ordered arrays of tapered nanostructures on the surface of PMMA and silicon, through the hot-embossing nanoimprint of polymer using molds prepared from e-beam lithography and hydrothermally grown ZnO nanorod arrays. The use of PMMA and ZnO nanorod thin films allows the formation of anti-reflection structures on a curved or flat surface to effectively suppress the reflectance of the incident light. It provides a simple and low-cost means for large-scale use in the production of AR layers for improving optical and optoelectronic device performance, such as solar cells and photodetectors. A drastic reduction in the reflectivity of the AR layer over a broad spectral range was demonstrated. In addition, the great improvement on the light harvest efficiency of the solar cells by over 30% using the nanostructured AR layer was validated. (C) 2011 Elsevier B.V. All rights reserved.

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