Journal
THIN SOLID FILMS
Volume 519, Issue 10, Pages 3373-3377Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.12.092
Keywords
Amorphous thin films; Zinc; Zinc oxide; Chemical diffusion coefficient; Galvanostatic intermittent titration; Electrochemical impedance spectroscopy
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Funding
- Zhejiang University
- Fundamental Research Funds for the Central Universities [2010QNA4003]
- Grants-in-Aid for Scientific Research [21350115] Funding Source: KAKEN
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Amorphous Zn and ZnO thin films have been prepared by radio frequency magnetron sputtering on Cu substrates and have been characterized by X-ray diffraction, scanning electron microscope, and Raman spectroscopy. The electrochemical performance of the thin films has been studied by galvanostatic cycling and cyclic voltammetry. The voltage dependence of Li-ion chemical diffusion coefficients, Du, of the films has been determined by galvanostatic intermittent titration technique (GITT) and electrochemical impedance spectroscopy (EIS). It is found that the amorphous Zn and ZnO films exhibit almost the same Du values ranging from 10(-14) to 10(-12)cm(2) s(-1) and similar Li-ion transport characteristics determined both by GITT and by EIS methods. (C) 2010 Elsevier B.V. All rights reserved.
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