Journal
THIN SOLID FILMS
Volume 519, Issue 21, Pages 7497-7502Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.12.100
Keywords
Numerical simulation; Grain boundaries; CIGS solar cell; Substrate/superstrate configuration
Categories
Funding
- Slovenian Research Agency [P2/0197]
Ask authors/readers for more resources
The paper presents a two-dimensional simulation study of a polycrystalline Cu(In,Ga)Se-2 (CIGS) solar cell with various shapes of grains inside the CIGS absorber layer. The grain boundaries (GBs) with a diverse valence-band offset (VBO) and the density of defect states (N-tA) are considered so as to evaluate their effects on the performance of the CIGS cell. The numerical simulations show that a CIGS cell with column-like grains can achieve a high conversion efficiency (eta), while the eta of a CIGS cell with diamond-like grains is low if the VBO at the GBs exceeds 0.4 eV. The VBO at which the eta of the CIGS cell with diamond-like grains peaks is found at 0.20-0.27 eV. A favorable VBO mainly depends on the shape of the grains, but it also depends on the N-tA. The simulations of the CIGS cells in the substrate and superstrate configurations showed that their performances change if the VBO is varied. This result also implies that the configuration of the CIGS cell is important and the substrate configuration with larger grains in the space-charge region has a considerable advantage if the VBO ranges from 0 eV to 0.2 eV. (C) 2010 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available