Journal
THIN SOLID FILMS
Volume 519, Issue 18, Pages 6144-6147Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.03.134
Keywords
Infrared; Film bulk acoustic resonator; ZnO; Thickness field excitation; Lateral field excitation
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Funding
- NASA Astrobiology Institute
- Chinese Scholarship Council
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This paper reported the investigation of an infrared (IR) sensitive, ZnO based Film Bulk Acoustic Resonator (FBAR). The resonant frequency of the FBAR decreased under IR illumination, and results demonstrated a linear dependence on IR intensity. The sensing mechanism is attributed to the temperature-dependent Young's modulus of the resonator material (ZnO), which subsequently shifts the resonant frequency. Thickness Field Excitation FBAR and Lateral Field Excitation (LFE) FBAR were fabricated and characterized with detection limits of 0.7 mu W/mm(2) and 2 mu W/mm(2), respectively, but the LFE FBAR exhibited higher IR sensitivity. (C) 2011 Elsevier BM. All rights reserved.
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