Journal
THIN SOLID FILMS
Volume 519, Issue 21, Pages 7444-7448Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.12.234
Keywords
CdTe; ZnO; TCO; Intrinsic ZnO
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CdTe/CdS and CdTe/ZnO thin film solar cells were grown with a high vacuum evaporation based low temperature process (<= 420 degrees C). Aluminium doped zinc oxide (AZO) was used as transparent conducting oxide (TCO) material. AZO exhibited excellent stability during the solar cell processing, and no significant change in electrical conductivity or transparency was observed. The current density loss due to absorption in the 1 pm thick AZO layer with 5 Omega per square sheet resistance was found to be 1.2 mA/cm(2). We investigated the influence of an intrinsic ZnO layer (i:ZnO) in combination with various CdS thicknesses. The i:ZnO layer was found to significantly increase the open circuit voltage of the solar cells with very thin CdS layer. Increasing thickness of the i:ZnO layer leads to UV absorption losses, narrowing of the depletion layer width and hence reduced collection efficiency in the long wavelength (685-830 nm) part. With AZO/i:ZnO bi-layer TCO we could achieve cell efficiencies of 15.6% on glass and 12.4% on the flexible polyimide film. (C) 2011 Elsevier B.V. All rights reserved.
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