Journal
THIN SOLID FILMS
Volume 519, Issue 19, Pages 6624-6628Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.04.233
Keywords
Diluted magnetic semiconductors; Fe-Ga co-doping; Oxygen vacancies; Zinc oxide; Miscocropy
Categories
Funding
- National Natural Science Foundation of China [51002134]
- Fundamental Research Funds for the Central Universities [2010QNA4002]
- Ministry of Education of China [707035]
- SRF for ROCS, SEM [J20091215]
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Fe-doped and Fe-Ga co-doped ZnO diluted magnetic semiconductor thin films on quartz substrate were studied. Rapid annealing enhanced the ferromagnetism (FM) of the films grown in Ar/O-2. All the films grown in Ar are n-type and the carrier concentration could increase significantly when Ga is doped. The state of Fe in the films was investigated exhibiting Fe3+. Magnetic measurements revealed that room temperature ferromagnetism in the films were doping concentration dependent and would enhance slightly with Ga doping. The origin of the observed FM is interpreted by the overlapping of polarons mediated through oxygen vacancy based on the bound magnetic polaron model. (C) 2011 Elsevier B.V. All rights reserved.
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