4.4 Article

Crystalline-silicon-based infra-red LEDs and routes to laser diodes

Journal

THIN SOLID FILMS
Volume 519, Issue 24, Pages 8441-8445

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.05.020

Keywords

Dislocation engineering; Light-emitting diodes; Rare earth compounds; Silicon

Funding

  1. European Research Council under the ERC [SILAMPS 226470]
  2. EPSRC [EP/D032210/1] Funding Source: UKRI
  3. Engineering and Physical Sciences Research Council [EP/D032210/1] Funding Source: researchfish

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We review progress in silicon LEDs using dislocation engineering to achieve high temperature operation, a process that is fully CMOS (Complementary Metal Oxide Semiconductor) compatible. We concentrate on devices operating in the near infra-red where high value applications are. The need for silicon emitters, lasers and optical amplifiers is discussed followed by an outline of previous approaches and possible future routes explored. Results on gain in silicon are reported and routes to electrically pumped injection lasers and optical amplifiers considered. Extension of 1.1 and 1.5 mu m devices to other wavelengths is discussed. (C) 2011 Elsevier B. V. All rights reserved.

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