Journal
THIN SOLID FILMS
Volume 519, Issue 21, Pages 7386-7389Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.01.142
Keywords
CZTSe thin films; Electroreflectance; Photoluminescence; Raman scattering
Categories
Funding
- Korea Ministry of Knowledge Economy (MKE) [2008-N-PV08-P-08]
- National Research Foundation of Korea
- Ministry of Education, Science and Technology [2008-0059038]
- Korea Evaluation Institute of Industrial Technology (KEIT) [2008-N-PV08-P-08] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2008-0059038] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Cu2ZnSnSe4 thin films with different substrate temperature and Cu flux were grown by thermal co-evaporation. Raman scattering, photoluminescence, and contactless electroreflectance (ER) measurements were performed. The Raman spectra of Cu2ZnSnSe4 show two main peaks at 170 and 192 cm(-1). The photoluminescence spectrum shows a peak below 1.0 eV. Franz-Keldysh oscillations (FKOs) were observed in the ER spectra. From the analysis of the FKOs, the bandgap energy of Cu2ZnSnSe4 thin films is estimated to be 1.07 eV at 90 K and 0.99 eV at room temperature. We conclude that the bandgap energy of Cu2ZnSnSe4 thin films is around 1.0 eV. (C) 2011 Elsevier B.V. All rights reserved.
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