Journal
THIN SOLID FILMS
Volume 519, Issue 19, Pages 6334-6338Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.04.022
Keywords
High rate deposition; UHF power; HF bias; Hardness
Categories
Funding
- Korea Science and Engineering Foundation (KOSEF) through the Center for Advanced Plasma Surface Technology (CAPST) at Sungkyunkwan University
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A high efficiency, high-rate deposition process was developed for silicon oxide films using plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF) power with high frequency (HF) bias. The effect of the UHF input power with HF bias on the anti-scratch properties of the silicon oxide films was examined. The hybrid plasma process was also examined by advanced plasma source. Dissociation of the octamethylycyclodisiloxane (OMCTS) precursor was controlled by the plasma processing parameters. SiOx films were deposited on polycarbonate substrates by PECVD using OMCTS and oxygen carrier gas. The rate of SiOx film deposition increased with increasing input energy. The plasma was analyzed by optical emission spectroscopy. The deposition rate was characterized using an alpha-step. The mechanical properties of the coatings were examined using a nano-indenter and pencil hardness measurements. The chemical properties of the coatings were examined by Fourier transform infrared spectroscopy. The deposition rate of the SiOx films was controlled by the dissociation of OMCTS using the appropriate intensity of excited neutrals, ionized atoms and input UHF input power with HF bias at room temperature. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
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