4.4 Article

Electron beam deposition system causing little damage to organic layers

Journal

THIN SOLID FILMS
Volume 519, Issue 19, Pages 6219-6223

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.03.056

Keywords

Electron beam deposition; Surface damage; X-ray intensity; Organic semiconductor; Aluminum deposition; Electroluminescence; Organic light emitting diodes

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Conditions for deposition of an aluminum (Al) layer on an organic light-emitting layer with an electron beam (EB) deposition system were optimized with respect to deposition rate and damage to organic layers. The damage to the organic layers was found to be mostly caused by X-rays emitted from a target bombarded with accelerated electrons. In order to decrease the X-ray intensity while maintaining a high deposition rate, we used an EB source which emits high-density EB at low acceleration voltage. In addition, we inserted a heat reflector and a sintered-carbon liner between the Al target and copper crucible to improve heat insulation. As a result, the voltage needed for the deposition of Al electrodes at a rate of about 8 nm/s was lowered from normal voltages of 2.0 kV or higher to as low as 1.5 kV. To reduce the number of electrons hitting the substrate, we set pole pieces near the target and an electron trap in the chamber. The devices on which Al electrodes were deposited with the EB system showed almost the same properties as those of devices on which the Al electrodes were deposited by a resistive-heating method. (C) 2011 Elsevier B.V. All rights reserved.

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