Journal
THIN SOLID FILMS
Volume 520, Issue 1, Pages 224-229Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.07.033
Keywords
Topological insulators; Molecular beam epitaxy; Silicon; Bismuth selenide; Interface structure; Transmission electron microscopy; Reflection high energy electron diffraction
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Funding
- IAMDN of Rutgers University
- National Science Foundation [NSF DMR-0845464]
- Office of Naval Research [ONR N000140910749]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [845464] Funding Source: National Science Foundation
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Atomically sharp sharp epitaxial growth of Bi2Se3 films is achieved on Si(111) substrate with molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi2Se3 and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction. The lattice constant of Bi2Se3 is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi2Se3 film down to the first quintuple layer without any second phase or an amorphous layer. (C) 2011 Elsevier B.V. All rights reserved.
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