Journal
THIN SOLID FILMS
Volume 519, Issue 1, Pages 362-366Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.07.108
Keywords
La2O3; High-k gate dielectric; T-ALD; PE-ALD; La(iPrCp)(3); Growth characteristics; Electrical properties
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Funding
- Ministry of Knowledge Economy (MKE, Korea) [10030519]
- Korea government (MEST)
- Ministry of Education, Science and Technology [2009-0083749, 2009-0082853]
- National Research Foundation of Korea [2007-2002864] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La (iPrCp)(3)] as a La precursor. H2O and O-2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)(3) precursor can be one of the viable options applicable into future microelectronic industry. (C) 2010 Elsevier B.V. All rights reserved.
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