Journal
THIN SOLID FILMS
Volume 518, Issue 10, Pages 2808-2811Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.08.036
Keywords
Al-doped zinc oxide; Radio-frequency magnetron sputtering; Hall effect measurements; UV/VIS spectroscopy; Thin film transistors
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Funding
- Information Display RD Center [F0004062-2009-32]
- Ministry of Knowledge Economy of Korean government
- Korea Evaluation Institute of Industrial Technology (KEIT) [F0004060-2010-33] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Al-doped ZnO (AZO) thin films have been prepared on the c-Si oriented direction of (100) and glass substrates, by radio frequency magnetron sputtering from ZnO-2 wt.% Al2O3 ceramic targets. The effects of the working pressure on the optical and electrical properties of the films have been studied. The optical properties, measured by the ultraviolet-visible system, show that the transmittance and optical bandgap energy are influenced by the working pressure. The Hall resistivity, mobility, and carrier concentration were obtained by a Hall measurement system and these parameters were also influenced by the working pressure. The AZO thin-film transistors (TFTs) were fabricated on highly doped c-Si substrates. The TFT structures were made up AZO as the active layer and SiOxNy/SiNx/SiOx as the gate layer with 20 nm and 35 nm thickness, respectively. The ultra-thin TFTs had an on/off current ratio of 10(4) and a field-effect mobility of 0.17 cm(2)/V.s. These results show that it is possible to fabricate an AZO TFT that can be operated with an ultra-thin gate dielectric. (C) 2009 Elsevier B.V. All rights reserved.
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