Journal
THIN SOLID FILMS
Volume 518, Issue 17, Pages 4997-5002Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.02.065
Keywords
Magnetron sputtering; ZnO:Al films; Thin film silicon solar cells
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Funding
- German BMU [0327693A]
- Shanghai Municipal Science and Technology Commission Foundation [09JC1404600, 0852nm06100]
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Mid-frequency magnetron sputtering of aluminum doped zinc oxide films (ZnO:Al) from tube ceramic targets has been investigated for silicon based thin film solar cell applications. The influence of working pressure on structural, electrical, and optical properties of sputtered ZnO:Al films was studied. ZnO:Al thin films with a minimum resistivity of 3.4x10(-4) Omega cm, high mobility of 50 cm(2)/Vs, and high optical transmission close to 90% in visible spectrum region were achieved. The surface texture of ZnO:Al films after a chemical etching step was investigated. A gradual increase in feature sizes (diameter and depth) was observed with increasing sputter pressure. Silicon based thin film solar cells were prepared using the etched ZnO:Al films as front contacts. Energy conversion efficiencies of up to 10.2% were obtained for amorphous/microcrystalline silicon tandem solar cells. (C) 2010 Elsevier B.V. All rights reserved.
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