Journal
THIN SOLID FILMS
Volume 518, Issue 22, Pages 6567-6572Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.03.058
Keywords
Cu2ZnSnS4; Sulfurization; Sputtering; Stacked metallic films; Raman scattering; XRD
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We fabricated Cu2ZnSnS4 (CZTS) thin films through sulfurization of stacked metallic films. Three types of Cu-Zn-Sn metallic films, i.e., Cu-rich. Cu-correct and Cu-poor precursor films were sputtered onto Mo-coated glass. The sulfurization of stacked Cu-Zn-Sn alloy films was performed at a relatively high temperature, 570 degrees C, with S-powder evaporation. CZTS films from Cu-rich and Cu-correct precursors showed a Cu2-xS phase on the film surface, while CZTS films from Cu-poor precursors didn't show the Cu2-xS phase. However, all films didn't exhibit any extra secondary phase and exhibited good crystalline textures even with Cu-ratio differences in metallic precursor films. Fabricated CZTS films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and Raman scattering measurements. SEM cross-section images of CZTS films showed that Cu-poor CZTS films were grown with more smooth film surface compared with other types of CZTS films. (C) 2010 Elsevier B.V. All rights reserved.
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