Journal
THIN SOLID FILMS
Volume 518, Issue 18, Pages 5326-5330Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.04.004
Keywords
Zinc oxide; Hafnium oxide; High-k dielectrics; Oxide semiconductor; Metal-insulator-semiconductor capacitor; Annealing; Sputtering; Atomic layer deposition
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Funding
- Ministry of Education, Science and Technology [2009-0081961, R31-2008-000-10075-0]
- KIST [2E21580]
- National Research Council of Science & Technology (NST), Republic of Korea [2E21580] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-50170, R31-2008-000-10075-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Metal-insulator-semiconductor capacitors were fabricated with sputtered ZnO and atomic layer deposited HfO2 as the semiconductor and gate dielectric layers, respectively. From the capacitance-voltage measurements, it was confirmed that pre-deposition annealing of the sputtered ZnO layer at 300 degrees C in air greatly decreased the interfacial trap density (similar to 2 x 10(12) cm(-2) eV(-1)), X-ray photoelectron spectroscopy showed a decrease in the OH bonds adsorbed on the ZnO surface after pre-deposition annealing, which improved the interface property. A very small capacitance equivalent thickness of 1.3 nm was achieved, which decreased the operation voltage (<5V) of the device significantly. (C) 2010 Elsevier B.V. All rights reserved.
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